GaN for Advanced Power Applications
GaN4AP will make GaN-based electronics one of the main technology for active devices in all power conversion systems in Europe. A pervasive use of GaN electronics will allow the possibility of developing close-to-zero energy loss power electronic systems, an objective in line with the Energy Efficiency Directive of the European Commission.
In summary, the GaN4AP project will reach the following ambitious results:
Development of innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology, based on state-of-the-art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency package that can achieve the requested 99% power conversion efficiency.
Development of an innovative material (Aluminium Scandium Nitride, AlScN) which, combined with advanced growth and process solutions, can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors.
Development of a new generation of vertical power GaN-based devices on MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V.
Development of new, intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the design of novel E-Mobility power converters.
The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries. This project will establish a strong European leadership in GaN-based devices technology. It will be able to strongly support the European industry in their research and development activities for increasing the reliability and yield of production processes for GaN on Si power devices, the exploitation of methods for advanced metrology and novel devices architecture, and at the simultaneous evaluation of the envisioned applications by the building of challenging demonstrators.